current gain

电流放大（增益）

双语例句

Hence it will have a higher current gain when connected to a more demanding load. 因此，缓冲器在连接到要求比较高的负载时就具有较高的电流增益。

However, AC current gain degrade slowly. 而交流电流增益退化缓慢。

The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment. 多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数。

For logic devices, the incremental current gain is very important. 对于逻辑器件来说，提高电流增益是非常重要的。

Collector to-base current gain 集电极-基极电流增益

The results show that the base width correlated with base resistance and current gain is one of the key factors for the optimum design of the device. 结果表明，与基极电阻和电流增益相关的基区宽度是器件优化设计的重点之一。

Based on this model, the electron transit time, the current gain and the cutoff frequency are calculated. 并在此模型基础上对电子在基区中的渡越时间、HBT的电流增益和截止频率等进行了计算。

The results show that as the stress time increase, turn-on voltage increase, DC current gain decrease, particularly at low forward base-emitter bias. 研究结果表明，随应力时间的增加，开启电压增加，直流电流增益下降，特别是在低E-B正偏电压时下降*；

Additionally, current gain depends on the silicon surface cleaning condition before polysilicon deposition. 电流增益依赖于淀积多晶硅前的表面处理条件。

The contribution of polysilicon emitter to the improved current gain and the current multiplication effect caused by collision on ionization of the neutral impurities in the collector region at low temperature are both discussed in this paper. 着重分析了多晶硅发射极对提高电流增益的作用和低温下集电区中性杂质碰撞电离引起的电流倍增效应。

A Method of Current Gain Analysis of Magnetic Amplifiers 磁放大器的电流放大倍数分析方法

The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation 低温多晶硅发射极晶体管电流增益和截止频率的解析模型

N steps current-mode low filters and universal filters based on duo-output CCII ( DOCCII) with variable current gain are presented and analysed. An expression about N steps universal filters is presented. 本文提出了基于可变电流增益双输出CCII（DOCCII）的电流模式N阶低通滤波器和通用滤波器，并给出了N阶通用滤波器的一个通用表达式。

Relations of current gain with neutron doses were shown. 给出了这些晶体管电流增益与中子注量的关系；

This paper describes the three dimensional numerical analysis of current gain for the lateral transistor with multiple collectors by using the finite difference method. 本文叙述了用有限差法对多集电极横向晶体管电流增益进行三维数值分析。

The effects of the relative position between the interfaces of pn junction ( emitter base) and SiGe/ Si on the current gain and frequency performance of SiGe/ Si HBT are investigated by simulation and experiment. 从模拟和实验两方面研究了SiGe/SiHBT发射结中pn结界面和SiGe/Si界面的相对位置对器件的电流增益和频率特性的影响。

A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. 本文考虑禁带变窄效应、载流子冻析效应和多晶硅/单晶硅界面复合与氧化层隧穿效应，采用有效复合速度方法，建立了多晶硅发射极晶体管电流增益的温度关系模型。

Temperature Dependence of the Current Gain and the Nonideal Component of Base Current in Microwave Transistors 微波晶体管电流增益和基极电流非理想因子的温度特性

Double-polysilicon RCA transistors, with both less temperature dependence on current gain and higher cut-off frequency, are fabricated. 研制的多晶硅发射区RCA晶体管不仅具有较低的电流增益-温度依赖关系，而且还具有较快的工作速度。

LOSS AND GAIN It is shown that the surface recombination in the extrinsic base degrades the current gain significantly. 结果表明，表面态的存在对集电极电流几乎不产生影响，但显著增加基极电流，使得电流增益*下降。

A new hFE ( T) expression of the devices has been derived by using the tunneling mechanism. The temperature dependence of the current gain, the Gummel characteristics and the hFE-Ic characteristics for these devices have been well explained. 在10KhFE＝21.7，β＝42的低温双极晶体管.本文还用隧穿机理推导出hFE（T）的新的表示式，很好地解释了这种器件的hFE温度特性、Gummel特性和hFE－Ic特性。

The current gain and frequency response ( fT and fmax) of PET with exponential doping profile in emitter and base under high-level injection have been simulated by taking the measured data of studied device as the input pa-rameters. 结合实例模拟了在大注入下具有发射区、基区指数掺杂分布的PET的电流增益和频率特性（fT人和fmax）。

This kind of phenomenon is promoted warmly by the high power and it is caused that the electric current gain and shoulder the coefficient of temperature. 这种现象是高功率温升和电流增益负温度系数引起的。

Meanwhile, the four intrinsic y-parameters, current gain and the unilateral power gain are obtained and compared to the experimental data to prove the high frequency small signal model. 通过将采用本模型计算得到的本征电流增益和单向功率增益与文献的结果比较，证明本文推导的高频小信号模型是*的。

Electrical test indicates that the current gain and collector current of implanted transistor is larger than that without implantation. 电学特性测量结果表明，经过离子注入的多晶硅发射极晶体管的电流增益和*电流增益对应的集电极电流*高于未经离子注入的晶体管。

A new current gain expression for polysilicon emitter transistor was derived and the experimental result was showed. 导出多晶硅发射极晶体管电流增益的表达式，很好地解释了实验结果。

A mathematic model of funnel MCP is built. The theoretical evidence of reducing noise figure and improving the current gain is given. It will provide a theory foundation for further craft research. 建立了漏斗型MCP的数学模型，给出了*MCP的噪声因子及提高电流增益的理论依据，为低噪声MCP进*的工艺研究打下了基础。

And the influence that secondary quality factor and the coupling coefficient impact on voltage gain, the current gain and transmission power gain is analyzed. 4. 并分析了次级品质因数和耦合系数对电压增益、电流增益和传输功率的影响。

Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles. 进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

The converters with low-voltage and buck current gain more and more application, especially in communication and wide-band power supplies. 目前，低压、大电流的多路输出变换器得到了越来越广泛的应用，尤其在通信和宽带电源领域。

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